Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.8mm
Width:
0.9mm
Length:
1.65mm
Maximum Drain Source Resistance:
7.5 Ω
Package Type:
SC-75
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
150 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-75, SOT-416
Rds On (Max) @ Id, Vgs:
7Ohm @ 154mA, 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTA7002NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/1749065
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300mW (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
20 pF @ 5 V
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-75, SOT-416
Current - Continuous Drain (Id) @ 25°C:
154mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTA7002
ECCN:
EAR99
