Maximum Continuous Drain Current:
91 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 4.5
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
76 W
Maximum Gate Source Voltage:
±20 V
Height:
2.25mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4.1 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 45A, 10V
edacadModel:
NTD5C648NLT4G Models
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/8636534
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4.4W (Ta), 76W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 91A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD5C648
ECCN:
EAR99
