Maximum Continuous Drain Current:
24 A
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
181 W
Maximum Gate Source Voltage:
±30 V
Height:
16.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
125 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
title:
FCP125N65S3R0
Vgs(th) (Max) @ Id:
4.5V @ 2.4mA
REACH Status:
REACH Unaffected
edacadModel:
FCP125N65S3R0 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/8636362
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
181W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1940 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCP125
ECCN:
EAR99
