Maximum Continuous Drain Current:
10 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
±30 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
360 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
360mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs(th) (Max) @ Id:
4.5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
FCD360N65S3R0 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/8636356
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
730 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCD360
ECCN:
EAR99
