Maximum Continuous Drain Current:
75 A
Width:
5.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-247-4
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
222 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
595 W
Maximum Gate Source Voltage:
±30 V
Height:
22.74mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
23 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 7.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
23mOhm @ 37.5A, 10V
edacadModel:
FCH023N65S3L4 Models
Gate Charge (Qg) (Max) @ Vgs:
222 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/6152744
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7160 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCH023
ECCN:
EAR99
