N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 onsemi FDC855N

FDC855N N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 onsemi
FDC855N
onsemi

Product Information

Maximum Continuous Drain Current:
6.1 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.2 nC @ 10 V
Channel Type:
N
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
39 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
27mOhm @ 6.1A, 10V
title:
FDC855N
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDC855N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1830666
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.6W (Ta)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
655 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC855
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 6.1 A 30 V 6-Pin SOT-23 manufactured by onsemi. The manufacturer part number is FDC855N. While 6.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 39 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 27mohm @ 6.1a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.6w (ta). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 655 pf @ 15 v. The product powertrench®, is a highly preferred choice for users. The maximum gate charge and given voltages include 13 nc @ 10 v. supersot™-6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 6.1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc855, a base product number of the product. The product is designated with the ear99 code number.

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FDC855N, Single N-Channel, Logic Level, PowerTrench MOSFET 30V 6.1A 27mOhm Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Changes 14/Jun/2019(PCN Assembly/Origin)
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Mold Compound 08/April/2008(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDC855N(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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