Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Width:
6mm
Length:
5mm
Maximum Drain Source Resistance:
29 mΩ
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
48 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2490 pF @ 40 V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-MLP (5x6), Power56
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta), 22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS35
ECCN:
EAR99
This is N-Channel MOSFET 48 A 80 V 8-Pin Power 56 manufactured by onsemi. The manufacturer part number is FDMS3572. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 78 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. Furthermore, the product is 6mm wide. Its accurate length is 5mm. It provides up to 29 mω maximum drain source resistance. The package is a sort of pqfn8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 48 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 16.5mohm @ 8.8a, 10v. The maximum gate charge and given voltages include 40 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 78w (tc). The product's input capacitance at maximum includes 2490 pf @ 40 v. It has a long 11 weeks standard lead time. The product ultrafet™, is a highly preferred choice for users. 8-mlp (5x6), power56 is the supplier device package value. The continuous current drain at 25°C is 8.8a (ta), 22a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms35, a base product number of the product. The product is designated with the ear99 code number.
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