Automotive Standard:
No
Maximum Power Dissipation Pd:
2W
Product Type:
Power MOSFET
Maximum Drain Source Voltage Vds:
60V
Channel Mode:
Enhancement
Maximum Drain Source Resistance Rds:
300m?
Forward Voltage Vf:
0.8V
Height:
1.57mm
Typical Gate Charge Qg @ Vgs:
12.9nC
Length:
4.9mm
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
150?C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
3.5A
Channel Type:
Type N
Maximum Operating Temperature:
-55?C
Pin Count:
8
Mount Type:
Surface
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.5A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
345pF @ 25V
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDS994
ECCN:
EAR99
