Maximum Continuous Drain Current:
5 A, 6.5 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 4.5 V, 8.7 nC @ 4.5 V
Channel Type:
N, P
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W, 2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, -10 V, +10 V, +12 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ, 90 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
6.5A, 5A
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 10V
standardLeadTime:
35 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS9934
ECCN:
EAR99
