Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
9.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
38 W
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.39mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Maximum Drain Source Resistance:
107 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
107mOhm @ 8A, 5V
Gate Charge (Qg) (Max) @ Vgs:
11.3 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
38W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
