Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.3 nC @ 5 V
Channel Type:
N
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
152 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
95mOhm @ 2.5A, 10V
title:
FDC6561AN
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDC6561AN Models
Current - Continuous Drain (Id) @ 25°C:
2.5A
edacadModelUrl:
/en/models/965289
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 5V
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6561
ECCN:
EAR99
