Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
3.6 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
360 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
160mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
5 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
214 pF @ 30 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDT014
ECCN:
EAR99
