Automotive Standard:
No
Maximum Power Dissipation Pd:
900mW
Product Type:
Power MOSFET
Maximum Drain Source Voltage Vds:
25V
Channel Mode:
Enhancement
Maximum Drain Source Resistance Rds:
450m?
Forward Voltage Vf:
0.83V
Height:
1mm
Typical Gate Charge Qg @ Vgs:
1.64nC
Length:
3mm
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Operating Temperature:
150?C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
680mA
Channel Type:
Type N
Maximum Operating Temperature:
-55?C
Pin Count:
6
Mount Type:
Surface
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDC6303N Models
Current - Continuous Drain (Id) @ 25°C:
680mA
edacadModelUrl:
/en/models/965280
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6303
ECCN:
EAR99
