Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
P
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
530 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.6A
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
405pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (1.6x1.6)
Packaging:
Tape & Reel (TR)
Power - Max:
600mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDME1023
ECCN:
EAR99
