Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
54 nC @ 10 V
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 20A, 10V
title:
FDMC7660
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDMC7660 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2509596
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.3W (Ta), 41W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4830 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
Supplier Device Package:
Power33
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC76
ECCN:
EAR99
