Automotive Standard:
No
Maximum Power Dissipation Pd:
2.5W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
100V
Channel Mode:
Enhancement
Series:
QFET
Forward Voltage Vf:
1.5V
Height:
2.3mm
Typical Gate Charge Qg @ Vgs:
8.7nC
Length:
6.6mm
Package Type:
TO-252
Minimum Operating Temperature:
-55?C
Maximum Drain Source Resistance Rds:
180m?
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
10A
Channel Type:
Type N
Maximum Operating Temperature:
150?C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
180mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 40W (Tc)
standardLeadTime:
34 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
520 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD13N10
ECCN:
EAR99
