Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
2.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Package Type:
MicroFET 2 x 2
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 4.5 V
Channel Type:
P
Length:
2.05mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.4 W, 900 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.775mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 12A, 4.5V
edacadModel:
FDMA908PZ Models
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4494043
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
3957 pF @ 6 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMA908
ECCN:
EAR99
