N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F onsemi FQPF3N80C

FQPF3N80C N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F onsemi
FQPF3N80C
FQPF3N80C
onsemi

Product Information

Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
10.16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
39 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.19mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.8 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
705 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQPF3
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 3 A 800 V 3-Pin TO-220F manufactured by onsemi. The manufacturer part number is FQPF3N80C. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The package is a sort of to-220f. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 39 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.19mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.8 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 4.8ohm @ 1.5a, 10v. The maximum gate charge and given voltages include 16.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 39w (tc). The product's input capacitance at maximum includes 705 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-220f-3 is the supplier device package value. The continuous current drain at 25°C is 3a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqpf3, a base product number of the product. The product is designated with the ear99 code number.

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Trans MOSFET N-CH 800V 3A 3-Pin TO-220(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev 03/Nov/2023(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Passivation Material 26/June/2007(PCN Design/Specification)
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FQP3N80C, FQPF3N80C(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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