Forward Voltage Vf:
1.5V
Width:
3.56 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
4nC
Package Type:
SOT-223
Maximum Continuous Drain Current Id:
850mA
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
1.35Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
200V
Channel Type:
Type N
Length:
6.5mm
Standards/Approvals:
No
Pin Count:
4
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.2W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
QFET
Height:
1.6mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
1.35Ohm @ 425mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
5.2 nC @ 5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FQT4N20LTF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/1052063
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.2W (Tc)
standardLeadTime:
47 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
SOT-223-4
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
850mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQT4N20
ECCN:
EAR99
