Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8 nC @ 5 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
50mOhm @ 4A, 10V
title:
FDC658P
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDC658P Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/979811
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.6W (Ta)
standardLeadTime:
10 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
750 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC658
ECCN:
EAR99
