Priced to Clear:
Yes
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12.3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
28 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Common Drain
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
20.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
12.3nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
ECH8663R-TL-H Models
Current - Continuous Drain (Id) @ 25°C:
8A
edacadModelUrl:
/en/models/2748156
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-ECH
Power - Max:
1.5W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ECH8663
ECCN:
EAR99
