Forward Voltage Vf:
-0.8V
Width:
1.35 mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
2.2nC
Package Type:
SOT-363
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
880mA
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
20V
Channel Type:
Type P
Length:
2.2mm
Standards/Approvals:
No
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
350mW
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±12 V
Maximum Drain Source Resistance Rds:
1Ω
Height:
1mm
Minimum Operating Temperature:
-55°C
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
260mOhm @ 880mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTJD4152PT1G Models
Current - Continuous Drain (Id) @ 25°C:
880mA
edacadModelUrl:
/en/models/687088
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
155pF @ 20V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
272mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD4152
ECCN:
EAR99
