Maximum Drain Source Voltage:
8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
+8 V
Maximum Gate Threshold Voltage:
1V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
320 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
N+P Loadswitch
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
175mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTJD1155LT1G Models
Current - Continuous Drain (Id) @ 25°C:
1.3A
edacadModelUrl:
/en/models/695256
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
41 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
400mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD1155
ECCN:
EAR99
