Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
7.6 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1.1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
170 mΩ
Package Type:
ChipFET
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.9A, 4.5V
title:
NTHD4102PT1G
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTHD4102PT1G Models
Current - Continuous Drain (Id) @ 25°C:
2.9A
edacadModelUrl:
/en/models/921573
Configuration:
2 P-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 16V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
8.6nC @ 4.5V
Supplier Device Package:
ChipFET™
Packaging:
Tape & Reel (TR)
Power - Max:
1.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTHD4102
ECCN:
EAR99
