Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
6.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
135 mΩ
Package Type:
TSOP-6
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.65 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
90mOhm @ 3.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTGS3441T1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/1749073
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
480 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.65A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTGS3441
ECCN:
EAR99
