Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
17 mΩ
Package Type:
ECH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
ECH8310-TL-H Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/2748142
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1400 pF @ 10 V
standardLeadTime:
29 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-ECH
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ECH8310
ECCN:
EAR99
