N-Channel MOSFET, 6 A, 35 V, 6-Pin CPH ON Semiconductor CPH6443-TL-H

CPH6443-TL-H N-Channel MOSFET, 6 A, 35 V, 6-Pin CPH ON Semiconductor
CPH6443-TL-H
CPH6443-TL-H
onsemi

Product Information

Priced to Clear:
Yes
Maximum Drain Source Voltage:
35 V
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
37 mΩ
Package Type:
CPH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6
Rds On (Max) @ Id, Vgs:
37mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
edacadModel:
CPH6443-TL-H Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/2748127
Drain to Source Voltage (Vdss):
35 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-CPH
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CPH6443
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 6 A 35 V 6-Pin CPH ON Semiconductor manufactured by onsemi. The manufacturer part number is CPH6443-TL-H. Priced to Clear Options - yes. It has a maximum of 35 v drain source voltage. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 37 mω maximum drain source resistance. The package is a sort of cph. It consists of 1 elements per chip. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6. It has a maximum Rds On and voltage of 37mohm @ 3a, 10v. The maximum gate charge and given voltages include 10 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 35 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 470 pf @ 20 v. 6-cph is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 6a (ta). The product carries maximum power dissipation 1.6w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to cph6443, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Fab Site Transfer 26/Dec/2014(PCN Assembly/Origin)
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Raw Material Change 22/Jul/2015(PCN Design/Specification)
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Copper Wire Update 26/Dec/2014(PCN Design/Specification)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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