Maximum Continuous Drain Current:
44 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
750 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
120 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
120mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs:
108 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDH44N50 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/965297
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
750W (Tc)
standardLeadTime:
30 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
5335 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDH44
ECCN:
EAR99
