Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
40 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.3mm
Width:
4.7mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
180mOhm @ 9A, 5V
edacadModel:
IRL640A Models
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/1055599
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1705 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRL640
ECCN:
EAR99
