Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
27 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
30.5 W
Series:
SuperFET II
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.07mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
530 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
650mOhm @ 4A, 10V
title:
FCPF650N80Z
Vgs(th) (Max) @ Id:
4.5V @ 800µA
REACH Status:
REACH Unaffected
edacadModel:
FCPF650N80Z Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4966178
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
30.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1565 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCPF650
ECCN:
EAR99
