Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
35.7 W
Series:
SuperFET II
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.07mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
340 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1.1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
400mOhm @ 5.5A, 10V
edacadModel:
FCPF400N80Z Models
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4580848
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2350 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCPF400
ECCN:
EAR99
