Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
11.6 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
59 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 11.5 V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
870mW (Ta), 41.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2113 pF @ 12 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
8.6A (Ta), 59A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS4841
ECCN:
EAR99
