Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
550 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.55mm
Width:
0.85mm
Length:
1.25mm
Maximum Drain Source Resistance:
2.2 Ω
Package Type:
SOT-723
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
870 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-723
Rds On (Max) @ Id, Vgs:
480mOhm @ 780mA, 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTK3139PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
edacadModelUrl:
/en/models/1793013
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
310mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 16 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-723
Current - Continuous Drain (Id) @ 25°C:
660mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTK3139
ECCN:
EAR99
