Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8.8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
20 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDS4435BZ Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1305763
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1845 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS4435
ECCN:
EAR99
