Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET 2 x 2
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W, 800 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
-
Configuration:
2 P-Channel (Dual) Common Drain
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3030pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MLP (2x3)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMB2308
ECCN:
EAR99
