Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
142 A
Mounting Type:
Through Hole
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.012 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
Manufacturer Standard Lead Time:
14 Weeks
Rds On (Max) @ Id, Vgs:
18mOhm @ 75A, 18V
Detailed Description:
N-Channel 650V 142A (Tc) 500W (Tc) Through Hole TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds:
4790pF @ 325V
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.3V @ 25mA
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs:
283nC @ 18V
Supplier Device Package:
TO-247-4L
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-4
Power Dissipation (Max):
500W (Tc)
Current - Continuous Drain (Id) @ 25°C:
142A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
ON Semiconductor
