Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
19 A
Mounting Type:
Through Hole
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.165 Ω
Package Type:
TO-220
Number of Elements per Chip:
1
Pin Count:
3
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 650V 19A (Tc) 33W (Tc) Through Hole TO-220FP
Vgs(th) (Max) @ Id:
4V @ 1.6mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 9.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1808pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220FP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Customer Reference:
Power Dissipation (Max):
33W (Tc)
Technology:
MOSFET (Metal Oxide)
