MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R

DMN10H170SFGQ-7 MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R
DiodesZetex

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
DMN10
Channel Type:
N
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
0.133 Ω
Package Type:
PowerDI3333-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R manufactured by DiodesZetex. The manufacturer part number is DMN10H170SFGQ-7. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product dmn10, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.133 ω maximum drain source resistance. The package is a sort of powerdi3333-8. It consists of 1 elements per chip. While 3.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - DMN10H170SFGQ-7(Technical Reference)

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