650V N-ch SiC Trench MOSFET in 4pin Pack

SCT3060ARC14 650V N-ch SiC Trench MOSFET in 4pin Pack
ROHM

Product Information

Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
58 nC @ 18V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
165 W
Maximum Gate Source Voltage:
22 V
Channel Type:
N
Maximum Gate Threshold Voltage:
5.6V
Maximum Drain Source Resistance:
78 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
39 A
Minimum Gate Threshold Voltage:
2.7V
Transistor Material:
SiC
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is 650V N-ch SiC Trench MOSFET in 4pin Pack manufactured by ROHM. The manufacturer part number is SCT3060ARC14. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 58 nc @ 18v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 165 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product is available in [Cannel Type] channel. The product carries 5.6v of maximum gate threshold voltage. It provides up to 78 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 39 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.7v. The transistor is manufactured from highly durable sic material. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet SCT3060ARC14(Technical Reference)

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You will get a confirmation email regarding your order of 650V N-ch SiC Trench MOSFET in 4pin Pack. You can also check on our website or by contacting our customer support team for further order details on 650V N-ch SiC Trench MOSFET in 4pin Pack.
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