MOSFET BVDSS: 25V-30V PowerDI5060-8 T&R

DMP34M4SPS-13 MOSFET BVDSS: 25V-30V PowerDI5060-8 T&R
DiodesZetex

Product Information

Maximum Continuous Drain Current:
21 A
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
PowerDI5060-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
127 nC @ 10V
Channel Type:
P
Length:
6mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
±25 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
6 mΩ
RoHs Compliant
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This is MOSFET BVDSS: 25V-30V PowerDI5060-8 T&R manufactured by DiodesZetex. The manufacturer part number is DMP34M4SPS-13. While 21 a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. The package is a sort of powerdi5060-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 127 nc @ 10v. The product is available in [Cannel Type] channel. Its accurate length is 6mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 6 mω maximum drain source resistance.

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Datasheet DMP34M4SPS-13(Technical Reference)

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