Small Low ON resistance MOSFETs

SSM3K7002CFU-LF-T Small Low ON resistance MOSFETs
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.27 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.1V
Height:
0.85mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
8.1 Ω
Package Type:
USM
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
170 mA
Minimum Gate Threshold Voltage:
1.1V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Small Low ON resistance MOSFETs manufactured by Toshiba. The manufacturer part number is SSM3K7002CFU,LF(T. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.27 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.1v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It provides up to 8.1 ω maximum drain source resistance. The package is a sort of usm. It consists of 1 elements per chip. While 170 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.1v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet SSM3K7002CFU(Technical Reference)

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