Category:
Power MOSFET
Dimensions:
3.4 x 3.4 x 1.18mm
Maximum Continuous Drain Current:
16 (State) A, 20 (Steady) A
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Maximum Drain Source Resistance:
12 mΩ
Package Type:
PowerDI3333
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.7 nC @ 4.5V
Channel Type:
N
Typical Input Capacitance @ Vds:
650 pF @ 15 V
Length:
3.4mm
Pin Count:
8
Forward Transconductance:
27S
Typical Turn-Off Delay Time:
6.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W
Maximum Gate Source Voltage:
±10 V
Height:
1.18mm
Typical Turn-On Delay Time:
5.1 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
