MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3

DMT10H072LFDF-7 MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3
DiodesZetex

Product Information

Maximum Continuous Drain Current:
4 A
Width:
2.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3V
Package Type:
U-DFN2020
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.1 nC @ 10V
Channel Type:
N
Length:
2.05mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
±20 V
Height:
0.58mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
110 mΩ
RoHs Compliant
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This is MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3 manufactured by DiodesZetex. The manufacturer part number is DMT10H072LFDF-7. While 4 a of maximum continuous drain current. Furthermore, the product is 2.05mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of u-dfn2020. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.1 nc @ 10v. The product is available in [Cannel Type] channel. Its accurate length is 2.05mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.1 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.58mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 110 mω maximum drain source resistance.

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Datasheet DMT10H072LFDF-7(Technical Reference)

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