Small Low ON resistance MOSFETs

SSM3J356R-LF-T Small Low ON resistance MOSFETs
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
2 A
Mounting Type:
Surface Mount
Transistor Material:
Silicon
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
4e+008 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Channel Type:
P
Pin Count:
3
RoHs Compliant
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This is Small Low ON resistance MOSFETs manufactured by Toshiba. The manufacturer part number is SSM3J356R,LF(T. It has a maximum of 60 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The transistor is manufactured from highly durable silicon material. The product carries 2v of maximum gate threshold voltage. It provides up to 4e+008 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 3 pins.

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Datasheet - SSM3J356R,LF(T(Technical Reference)

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