MOSFET BVDSS: 8V24V X2-DFN1006-3 T&R 3K

DMN2450UFB4-7R MOSFET BVDSS: 8V24V X2-DFN1006-3 T&R 3K
DiodesZetex

Product Information

Maximum Continuous Drain Current:
1 A
Width:
0.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.9V
Package Type:
X2-DFN1006
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.3 nC @ 10 V
Channel Type:
N
Length:
1.05mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
±12 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
700 mΩ
RoHs Compliant
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This is MOSFET BVDSS: 8V24V X2-DFN1006-3 T&R 3K manufactured by DiodesZetex. The manufacturer part number is DMN2450UFB4-7R. While 1 a of maximum continuous drain current. Furthermore, the product is 0.65mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.9v of maximum gate threshold voltage. The package is a sort of x2-dfn1006. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.05mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 700 mω maximum drain source resistance.

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Datasheet DMN2450UFB4-7R(Technical Reference)

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