This is MOSFET BVDSS: 8V24V X2-DFN1006-3 T&R 3K manufactured by DiodesZetex. The manufacturer part number is DMN2450UFB4-7R. While 1 a of maximum continuous drain current. Furthermore, the product is 0.65mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.9v of maximum gate threshold voltage. The package is a sort of x2-dfn1006. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.05mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 700 mω maximum drain source resistance.
Datasheet DMN2450UFB4-7R(Technical Reference)
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This is MOSFET BVDSS: 8V24V X2-DFN1006-3 T&R 3K manufactured by DiodesZetex. The manufacturer part number is DMN2450UFB4-7R. While 1 a of maximum continuous drain current. Furthermore, the product is 0.65mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.9v of maximum gate threshold voltage. The package is a sort of x2-dfn1006. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.05mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.35mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 700 mω maximum drain source resistance.
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