BSS84,215 P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia

BSS84-215 BSS84,215 P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia
BSS84,215
Nexperia

Product Information

Maximum Drain Source Voltage:
50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
P
Width:
1.4mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
130 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Height:
1mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is P-Channel MOSFET 130 mA 50 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BSS84,215. It has a maximum of 50 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 1.4mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 130 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 10 ω maximum drain source resistance. In addition, the height is 1mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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