Deliver to
United Kingdom
Enjoy 10% savings with code 'SAVE10' when you spend £50 or more! Available online only—enter the code at checkout!
This is MOSFET manufactured by ROHM. The manufacturer part number is QS8J2TR. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 20 nc @ 4.5 v (n channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. The product qs8j2, is a highly preferred choice for users. It features a maximum gate source voltage of ±10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 2.5mm wide. Its accurate length is 3.1mm. It provides up to 132 mω maximum drain source resistance. The package is a sort of tsmt. It consists of 2 elements per chip. While 4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.3v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
For more information please check the datasheets.
Basket Total:
£ 0
