Deliver to
United Kingdom
This is 30V Nch+Nch Power MOSFET manufactured by ROHM. The manufacturer part number is QH8KA1TCR. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 3 nc @ 10 v (n channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.4 w maximum power dissipation. The product qh8ka1, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 2.5mm wide. Its accurate length is 3.1mm. It provides up to 112 mω maximum drain source resistance. The package is a sort of tsmt. It consists of 2 elements per chip. While 4.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
For more information please check the datasheets.
Basket Total:
£ 0
