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This is N-Channel MOSFET 4 A 650 V R6504ENJ 3-Pin D2PAK manufactured by ROHM. The manufacturer part number is R6504ENJTL. While 4 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-263s. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 58 w maximum power dissipation. The product r6504enj, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 1.05 ω maximum drain source resistance.
For more information please check the datasheets.
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