Deliver to
United Kingdom
This is N-Channel MOSFET 8 A 30 V RF4E080BN 8-Pin HUML2020L manufactured by ROHM. The manufacturer part number is RF4E080BNTR. While 8 a of maximum continuous drain current. Furthermore, the product is 2.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of huml2020l. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product rf4e080bn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 17.6 mω maximum drain source resistance.
For more information please check the datasheets.
Basket Total:
£ 0
